Effects of annealing temperature on thermoelectric properties of Bi 2 Te 3 films prepared by co-sputtering

Applied Surface Science

Volumn 276, Issue , 2013, Pages 539-542

  Wang, Xing ^a   He, Hongcai ^a   Wang, Ning ^a   Miao, Lei ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b GUANGZHOU INSTITUTE OF ENERGY CONVERSION   (China)

Author keywords

Annealing temperature; Bismuth telluride; Co sputtering; Thermoelectric thin film

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; MAGNETRONS; SILICA; SPUTTERING; SUBSTRATES; TELLURIUM COMPOUNDS; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; THIN FILMS;

ANNEALING TEMPERATURES; BISMUTH TELLURIDE; COSPUTTERING; POWER FACTORS; RF-MAGNETRON CO-SPUTTERING; SUBSTRATE HEATING; THERMOELECTRIC PROPERTIES; THERMOELECTRIC THIN FILMS;

BISMUTH COMPOUNDS;

EID: 84877576930     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.03.130     Document Type: Article

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