Buffer-free Cu(In,Ga)Se2-solar cells by near-surface ion implantation

Solar Energy Materials and Solar Cells

Volumn 116, Issue , 2013, Pages 43-48

  Haarstrich, J ^a   Teichmann, M ^a   Metzner, H ^a   Gnauck, M ^a   Ronning, C ^a   Wesch, W ^a   Rissom, T ^b   Kaufmann, C A ^b   Schock, H W ^b   Scheumann, V ^c   Mannstadt, W ^c  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

^c SCHOTT AG   (Germany)

Author keywords

Annealing; Buffer free; Cu(In,Ga)Se2; Ion implantation; Surface inversion; Thin film solar cells

Indexed keywords

ABSORBER LAYERS; BUFFER-FREE; CU(IN , GA)SE2; HIGH-EFFICIENCY; IMPLANTATION-INDUCED DEFECTS; LOW ENERGY ION IMPLANTATION; THERMAL-ANNEALING; THIN-FILM SOLAR CELLS;

ANNEALING; BUFFER LAYERS; CADMIUM SULFIDE; GALLIUM; ION IMPLANTATION; MAGNESIUM; OPTICAL WAVEGUIDES; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS;

COPPER;

EID: 84877349032     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.04.009     Document Type: Article

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