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Volumn 519, Issue 21, 2011, Pages 7276-7279

Near-interface doping by ion implantation in Cu(In,Ga)Se2 solar cells

(9) Haarstrich, J a Metzner, H a Ronning, C a Rissom, T b Kaufmann, C A b Schock, H W b Mannstadt, W c Rudigier Voigt, E c Scheumann, V c

a FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

b HAHN MEITNER INSTITUT (Germany)

c SCHOTT AG (Germany)

Author keywords

Annealing; Cd diffusion; Cu(In,Ga)Se2; EQE; Ion implantation; Surface inversion; Thin film solar cells

Indexed keywords

ABSORBER LAYERS; CD DIFFUSION; CU(IN , GA)SE; CU(IN,GA)SE2; DOPING PROFILES; EQE; IMPLANTED LAYERS; LOW ENERGY ION IMPLANTATION; THERMAL-ANNEALING; THIN-FILM SOLAR CELLS;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; IONS; SEMICONDUCTOR DOPING; SOLAR ABSORBERS;

ION IMPLANTATION;

EID: 80052176857 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.12.090 Document Type: Conference Paper

Times cited : (1)

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