Electronic structure of boron doped diamond: An x-ray spectroscopic study

Applied Physics Letters

Volumn 102, Issue 16, 2013, Pages

  Glans, P A ^a,b   Learmonth, T ^a   Smith, K E ^a   Ferro, S ^c   De Battisti, A ^c   Mattesini, M ^d,e   Ahuja, R ^f   Guo, J H ^b  

^a USA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF FERRARA   (Italy)

^d UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^e INSTITUTO DE GEOCIENCIAS   (Spain)

^f UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION FEATURES; BORON DOPED DIAMOND; DIAMOND STRUCTURES; EXCITON-BINDING ENERGY; SOFT X-RAY EMISSIONS; SPECTROSCOPIC STUDIES; STRUCTURE DISTORTIONS; VALENCE-BAND MAXIMUMS;

BINDING ENERGY; DIAMOND FILMS; ELECTRONIC STRUCTURE; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; X RAY SPECTROSCOPY;

DIAMONDS;

EID: 84876971100     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4802814     Document Type: Article

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