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Journal of Materials Chemistry A

Volumn 1, Issue 3, 2013, Pages 677-683

Promising defect thermoelectric semiconductors Cu1-xGaSb xTe2 (x = 0-0.1) with the chalcopyrite structure

(5) Cui, Jiaolin a Li, Yapeng b Du, Zhengliang a Meng, Qingsen b Zhou, Hong c

a NINGBO UNIVERSITY OF TECHNOLOGY (China)

b Materials Science and Engineering College (China)

c CHINA UNIVERSITY OF MINING AND TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; LATTICE MISMATCH; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING TELLURIUM; SEMICONDUCTING TELLURIUM COMPOUNDS; THERMAL CONDUCTIVITY;

CHALCOPYRITE STRUCTURES; DEFECT CHALCOPYRITES; DENSITY OF STATE; ELECTRICAL CONDUCTIVITY; INTERMEDIATE TEMPERATURES; LATTICE THERMAL CONDUCTIVITY; STRUCTURE DISTORTIONS; THERMOELECTRIC SEMICONDUCTOR;

COPPER COMPOUNDS;

EID: 84876539539 PISSN: 20507488 EISSN: 20507496 Source Type: Journal
DOI: 10.1039/c2ta00157h Document Type: Article

Times cited : (70)

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