Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Wang, W J ^a   Loke, D ^a,b   Law, L T ^a   Shi, L P ^a   Zhao, R ^a   Li, M H ^a   Chen, L L ^b   Yang, H X ^a   Yeo, Y C ^b   Adeyeye, A O ^b   Chong, T C ^c   Lacaita, A L ^d  

^a DATA STORAGE INSTITUTE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

^d POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GOOD STABILITY; HIGH RESISTANCE; LOW POWER; MULTILEVEL CELL; PHASE CHANGE MEMORY (PCM); POWER REDUCTIONS; RESISTANCE DRIFTS; UNIVERSAL MEMORY;

CRYSTALLIZATION KINETICS; ELECTRIC PROPERTIES; ELECTRON DEVICES; GERMANIUM;

PHASE CHANGE MEMORY;

EID: 84876146443     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479143     Document Type: Conference Paper

References (8)

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