Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel: Toward reconfigurable CMOS applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Nakaharai, Shu ^a   Iijima, Tomohiko ^a   Ogawa, Shinich ^a   Suzuki, Shingo ^a   Tsukagoshi, Kazuhito ^b   Sato, Shintaro ^a   Yokoyama, Naoki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS POLARITY; CHANNEL REGION; DUAL GATES; GRAPHENE TRANSISTORS; NOVEL DEVICES; ON-OFF RATIO; P-TYPE; RECONFIGURABLE;

ELECTRON DEVICES; GRAPHENE;

TRANSISTORS;

EID: 84876121650     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6478976     Document Type: Conference Paper

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