Multilayer transition-metal dichalcogenide channel Thin-Film Transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Kim, Eok Su ^a   Kim, Sunkook ^b   Lee, Yun Sung ^b   Lee, Sang Yoon ^a   Lee, Sunhee ^a   Choi, Woong ^c   Peelaers, Hartwin ^d   Van De Walle, Chris G ^d   Hwang, Wan Sik ^e   Kosel, Thomas ^e   Jena, Debdeep ^e  

^a SAMSUNG Electronics   (South Korea)

^b Kyung Hee University   (South Korea)

^c Kookmin University   (South Korea)

^d University of California   (United States)

^e University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE CALCULATION; CURRENT MODULATION; CURRENT SATURATION; DICHALCOGENIDES; ELECTRONIC CHARACTERIZATION; FIELD-EFFECT MOBILITIES; LARGE AREA DISPLAY; THIN-FILM TRANSISTOR (TFTS);

DENSITY FUNCTIONAL THEORY; ELECTRON DEVICES; MATERIALS PROPERTIES; MOLYBDENUM COMPOUNDS; MULTILAYERS; THIN FILM TRANSISTORS; TRANSITION METALS;

OPTICAL MULTILAYERS;

EID: 84876104983     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6478985     Document Type: Conference Paper

References (4)

1. Radisavljevic, B. et al., Nature Nanotech., 6 147 (2011).
2. Liu, L. et al., IEEE TED 58 3042 (2011).
3. Yoon, Y. et al., Nano Lett, 11 3768 (2011).
4. Kamiya, T. et al., Sci. Technol. Adv. Mater., 11 044305 (2010).