Formation mechanism of Cu2ZnSnSe4 absorber layers during selenization of solution deposited metal precursors

Journal of Alloys and Compounds

Volumn 567, Issue , 2013, Pages 102-106

  Fella, Carolin M ^a   Uhl, Alexander R ^a   Hammond, Ceri ^b   Hermans, Ive ^b   Romanyuk, Yaroslav E ^a   Tiwari, Ayodhya N ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^b ETH ZURICH   (Switzerland)

Author keywords

Cu2ZnSnSe4; Formation mechanism; Kesterite; Selenization Secondary phase; Thin film solar cell

Indexed keywords

ENERGY DISPERSIVE X RAY SPECTROSCOPY; FINAL TEMPERATURES; FORMATION MECHANISM; INTERMEDIATE PHASIS; KESTERITES; SECONDARY PHASE; SUBSTRATE TEMPERATURE; THIN FILM SOLAR CELLS;

ACTIVATION ENERGY; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; THIN FILMS; TIN; X RAY DIFFRACTION; X RAY SPECTROSCOPY; ZINC;

DEPOSITS;

EID: 84875961644     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.03.056     Document Type: Article

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