Formation of Cu2ZnSnSe4 thin films by selenization of electrodeposited stacked binary alloy layers

Energy Procedia

Volumn 2, Issue 1, 2010, Pages 65-70

  Ganchev, M ^a   Kaupmees, L ^a   Iliyna, J ^a   Raudoja, J ^a   Volobujeva, O ^a   Dikov, H ^b   Altosaar, M ^a   Mellikov, E ^a   Varema, T ^a  

^a TALLINN UNIVERSITY OF TECHNOLOGY   (Estonia)

^b BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

Cu2ZnSnSe4; Electrodeposition; Precursor selenisation

Indexed keywords

ANNEALING CONDITION; BINARY ALLOY LAYER; CRYSTALLINE STRUCTURE; CU2ZNSNSE4; METAL COMPONENTS; POTENTIOSTATIC CONDITIONS; PRECURSOR SELENISATION; SELENIZATION; STACKED LAYER; TUBULAR REACTORS;

CERIUM ALLOYS; OPTICAL PROPERTIES; PHOTOVOLTAIC EFFECTS; QUARTZ; THIN FILMS; VAPOR DEPOSITION;

ELECTRODEPOSITION;

EID: 77957822807     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2010.07.012     Document Type: Conference Paper

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