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Volumn 5, Issue 9, 2012, Pages 8564-8571

Reaction pathways for the formation of Cu 2ZnSn(Se,S) 4 absorber materials from liquid-phase hydrazine-based precursor inks

(5) Hsu, Wan Ching a,b Bob, Brion a,b Yang, Wenbing a,b Chung, Choong Heui a,b Yang, Yang a,b

a CALIFORNIA NANOSYSTEMS INSTITUTE (United States)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER MATERIAL; DEPOSITION PROCESS; FORMATION MECHANISM; HIGH EFFICIENCY DEVICES; HIGH VACUUM; HYDRAZINIUM; KESTERITES; LIQUID PHASE; MATERIAL SYSTEMS; PHOTOVOLTAIC MATERIALS; PRECURSOR PHASIS; REACTION MECHANISM; REACTION PATHWAYS; ROOM TEMPERATURE; SECONDARY PHASIS; SLURRY DEPOSITION; THERMAL-ANNEALING;

CHALCOGENIDES; COPPER COMPOUNDS; RAMAN SPECTROSCOPY; TIN; X RAY DIFFRACTION;

HYDRAZINE;

ABSORPTION; ANNEALING; FUEL CELL; KESTERITE; PHOTOVOLTAIC SYSTEM; RAMAN SPECTROSCOPY; REACTION KINETICS; REACTION RATE; SLURRY; X-RAY DIFFRACTION;

EID: 84865202320 PISSN: 17545692 EISSN: 17545706 Source Type: Journal
DOI: 10.1039/c2ee21529b Document Type: Article

Times cited : (61)

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