The series photodetector frequency circuit system with ITO-Si metal-semiconductor-metal photodetector for linearity improvement in Hex fluorescence concentration detection of DNA probe

Optik

Volumn 124, Issue 11, 2013, Pages 1022-1028

  Hsu, Yuh Ming ^a   Chang, Chung Cheng ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

DNA probe; Fluorescence detection; Hex; Laser; Series photodetector frequency circuit system

Indexed keywords

CONCENTRATION DETECTIONS; DNA PROBE; FLUORESCENCE DETECTION; FLUORESCENCE TECHNIQUE; FREQUENCY CIRCUITS; FREQUENCY SENSITIVITY; HEX; METAL SEMICONDUCTOR METAL PHOTODETECTOR;

DNA; FLUORESCENCE; LASERS; PHOTODETECTORS; PROBES; SENSORS; SILICON; SURFACE PLASMON RESONANCE;

PHOTONS;

EID: 84875935240     PISSN: 00304026     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijleo.2013.01.016     Document Type: Article

References (13)

1. Y.M. Hsu, and C.C. Chang Improvement of frequency sensitivity of series photodetector frequency circuit system and its application for Cy5 fluorescence detection OPTIK 122 2011 1747 1752
2. Y.M. Hsu, and C.C. Chang A novel frequency method for quantitative analysis of fluorescence dye concentration by using series photodetector frequency circuit system Sens. Actuators A Phys. 154 2009 23 29
3. Y.M. Hsu, and C.C. Chang Analysis and improvement on frequency sensitivity of series photodetector frequency circuit system and its application for HEX fluorescence measurement Opt. Eng. 50 044401 2011 1 10
4. M.A. Matin, K.C. Song, B.J. Robinson, J.G. Simmons, D.A. Thompson, and F. Gouin Very low dark current InGaP/GaAs MSM photodetector using semi-transparent and opaque contacts Electron. Lett. 32 1996 766 767
5. S.D. Lin, and C.P. Lee GaAs metal-semiconductor-metal photodetectors with low dark current and high responsivity at 850 nm Semicond. Sci. Technol. 17 2002 1261 1266
6. M. Ito, and O. Wada Low dark current GaAs metal-semiconductor-metal (MSM) photodiodes using WSi, contacts IEEE J. Quant. Electron. 22 1986 1073 1077
7. C.H. Chen, S.J. Chang, Y.K. Su, G.C. Chi, J.Y. Chi, C.A. Chang, J.K. Sheu, and J.F. Chen GaN Metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts IEEE Photonics Technol. Lett. 13 2001 848 850
8. J.W. Seo, A.A. Ketterson, D.G. Ballegeer, K.Y. Cheng, I. Adesida, X. Li, and T. Gessert A comparative study of metal-semiconductor-metal photodetectors on GaAs with indium-tin-oxide and Ti/Au electrodes IEEE Photonics Technol. Lett. 40 1992 888 890
9. J.W. Seo, C. Caneau, R. Bhat, and I. Adesida Application of indium-tin-oxide with improved transmittance at 1.3 pm for MSM photodetectors IEEE Photonics Technol. Lett. 5 1993 1313 1315
10. S. Averine, O. Bondarenko, and R. Sachot High-speed limitations of the metal-semiconductor-metal photodiode structures with submicron gap between the interdigitated contacts Solid State Electron. 46 2002 2045 2051
11. N. Biyikli, T. Kartaloglu, O. Aytur, I. Kimukin, and E. Ozbay High-speed visible-blind GaN-based indium-tin-oxide Schottky photodiodes Appl. Phys. Lett. 79 2001 2838 2840
12. N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, and E. Ozbay High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts Appl. Phys. Lett. 82 2003 2344 2346
13. Y.M. Hsu, and C.C. Chang The oscillation condition and optical detection of series photodetector frequency circuit system matched with PMMA OPTIK 123 2012 1627 1631