GaAs metal-semiconductor-metal photodetectors with low dark current and high responsivity at 850 nm

Semiconductor Science and Technology

Volumn 17, Issue 12, 2002, Pages 1261-1266

  Lin, S D ^a   Lee, C P ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FABRICATION; LIGHT ABSORPTION; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING;

DARK CURRENTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036903767     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/12/309     Document Type: Article

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