High-speed limitations of the metal-semiconductor-metal photodiode structures with submicron gap between the interdigitated contacts

Solid-State Electronics

Volumn 46, Issue 12, 2002, Pages 2045-2051

  Averine, S ^a   Bondarenko, O ^b   Sachot, R ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b EPFL   (Switzerland)

Author keywords

Heterobarrier; Modeling; MSM detector; Photodetector; Response time; Semiconductor

Indexed keywords

ELECTRIC FIELDS; ENERGY GAP; HETEROJUNCTIONS; LIGHT ABSORPTION; PHOTODETECTORS; PHOTONS;

SHORT LIGHT PULSES;

PHOTODIODES;

EID: 0036890198     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00165-X     Document Type: Article

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