Bias-voltage dependent ultraviolet photodetectors prepared by GaO x + ZnO mixture phase nanocrystalline thin films

Journal of Alloys and Compounds

Volumn 566, Issue , 2013, Pages 201-205

  Wang, Rongxin ^a   Yang, Lechen ^a   Xu, Shijie ^a,b   Zhang, Xiaodong ^a   Dong, Xue ^a   Zhao, Yingchun ^a   Fu, Kai ^a   Zhang, Baoshun ^a   Yang, Hui ^a  

^a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Optical materials; Oxide material; Semiconductor; Thin film

Indexed keywords

APPLIED VOLTAGES; MIXTURE PHASE; NANOCRYSTALLINE THIN FILMS; OXIDE MATERIALS; PHOTOEXCITED CARRIERS; PHOTORESPONSES; THIN FILMS-SPUTTERED; ULTRA-VIOLET PHOTODETECTORS;

ELECTRIC FIELDS; FILM PREPARATION; MIXTURES; OPTICAL MATERIALS; PHOTODETECTORS; PHOTONS; SAPPHIRE; SEMICONDUCTOR MATERIALS; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

BIAS VOLTAGE;

EID: 84875915993     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.03.039     Document Type: Article

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