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Volumn 1, Issue 11, 2013, Pages 2131-2135

Ab initio study of electronic and optical behavior of two-dimensional silicon carbide

(10) Lin, Xiao a,b Lin, Shisheng a,b Xu, Yang a,b Hakro, Ayaz Ali a Hasan, Tawfique c Zhang, Baile d Yu, Bin e Luo, Jikui a Li, Erping a Chen, Hongsheng a,b

a ZHEJIANG UNIVERSITY (China)

b ZHEJIANG UNIVERSITY (China)

c UNIVERSITY OF CAMBRIDGE (United Kingdom)

d NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

e STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO STUDY; ELECTRONIC AND OPTICAL PROPERTIES; GEOMETRIC CONFIGURATIONS; IN-PLANE STRAINS; INTERLAYER SPACINGS; LAYERED NANOSTRUCTURE; OPTICAL BEHAVIOR; PHYSICAL THICKNESS;

DENSITY FUNCTIONAL THEORY; ENERGY GAP; GRAPHENE; LIGHT EMITTING DIODES; MONOLAYERS; MULTILAYERS; NANOSHEETS; OPTICAL CONDUCTIVITY; OPTOELECTRONIC DEVICES; TWO DIMENSIONAL;

SILICON CARBIDE;

EID: 84875852952 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c3tc00629h Document Type: Article

Times cited : (181)

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