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Volumn 22, Issue 19, 2012, Pages 10062-10068

Tuning the indirect-direct band gap transition of SiC, GeC and SnC monolayer in a graphene-like honeycomb structure by strain engineering: A quasiparticle GW study

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP TRANSITION; FIRST-PRINCIPLES CALCULATION; GW APPROXIMATION; NANO FILMS; QUASI PARTICLES; STRAIN ENGINEERING; STRAINED CONDITION; ULTRA-THIN;

EID: 84860370149     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/c2jm30915g     Document Type: Article
Times cited : (242)

References (50)
  • 28
    • 22144469121 scopus 로고
    • in, ed. F. Seitz, D. Turnbull and H. Ehrenreich, Academic, New York, 23, p. 1
    • L. Hedin and S. Lundqvist in Solid State Physics, ed., F. Seitz, D. Turnbull, and, H. Ehrenreich, Academic, New York, 1969, vol. 23, p. 1
    • (1969) Solid State Physics
    • Hedin, L.1    Lundqvist, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.