Thermoelectric properties of chalcogenide based Cu2xZnSn 1-xSe4

AIP Advances

Volumn 3, Issue 3, 2013, Pages

  Raju, Ch ^a   Falmbigl, M ^b   Rogl, P ^b   Yan, X ^c   Bauer, E ^c   Horky, J ^b   Zehetbauer, M ^b   Chandra Mallik, Ramesh ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b UNIVERSITY OF VIENNA   (Austria)

^c VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHALCOGENIDES; COPPER COMPOUNDS; II-VI SEMICONDUCTORS; LAYERED SEMICONDUCTORS; THERMAL CONDUCTIVITY; TIN COMPOUNDS; TORSIONAL STRESS; WAVELENGTH DISPERSIVE SPECTROSCOPY; ZINC SELENIDE;

ELECTRONIC CONTRIBUTIONS; HIGH PRESSURE TORSIONS; MAJORITY CHARGE CARRIERS; POWDER X RAY DIFFRACTION; QUATERNARY CHALCOGENIDES; SECONDARY PHASIS; SOLID-STATE SYNTHESIS; THERMOELECTRIC PROPERTIES;

SELENIUM COMPOUNDS;

EID: 84875818470     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4794733     Document Type: Article

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