Thermoelectric properties of (ZnSe)x(CdS)1-x films deposited by thermal evaporation

Radiation Effects and Defects in Solids

Volumn 145, Issue 1-2, 1998, Pages 133-142

  Reddy, B K ^a   Reddy, M M ^a   Venugopal, R ^a   Reddy, D R ^a  

^a SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

CdS; Electrical conductivity; Electron density; Grain boundary scattering; Mobility; Semiconductors, (ZnSe)x(Cds)1 x; Thermoelectric power; Thin films; ZnSe

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; EVAPORATION; GLASS; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; THERMAL EFFECTS; THERMOELECTRICITY;

THERMAL EVAPORATION;

SEMICONDUCTING FILMS;

EID: 0031624625     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420159808220029     Document Type: Article

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