Electronic structures of silicon monoxide film probed by X-ray absorption spectroscopy

Surface Science

Volumn 612, Issue , 2013, Pages 77-81

  Baba, Yuji ^a   Sekiguchi, Tetsuhiro ^a   Shimoyama, Iwao ^a   Hirao, Norie ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Evaporation; Molecular orientation; Polarization; Silicon monoxide; X ray absorption fine structure

Indexed keywords

DIVALENT STATE; ELEMENTAL SILICON; HIGHLY ORIENTED PYROLYTIC GRAPHITE; POLARIZATION DEPENDENCE; RESONANCE PEAK; SILICON MONOXIDE; SIO MOLECULES; X RAY ABSORPTION FINE STRUCTURES;

BINDING ENERGY; DEPOSITS; ELECTRONIC STRUCTURE; EVAPORATION; MOLECULAR ORIENTATION; MOLECULES; MONOLAYERS; PHOTOELECTRONS; POLARIZATION; SILICON; SUBSTRATES; SURFACES; THIN FILMS; X RAY ABSORPTION SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON OXIDES;

EID: 84875738208     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2013.02.015     Document Type: Article

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