Spectroscopic characterisation and chemical reactivity of silicon monoxide layers deposited on Cu(100)

Surface Science

Volumn 458, Issue 1, 2000, Pages 229-238

  Yubero, F ^a   Barranco, A ^a   Mejias J A ^b   Espinos J P ^a   Gonzalez Elipe A R ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE SEVILLA   (Spain)

^b UNIVERSIDAD PABLO DE OLAVIDE   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ADSORPTION; CHEMICAL REACTIONS; DEPOSITION; OXIDATION; PASSIVATION; PHOTOEMISSION; PROBABILITY DENSITY FUNCTION; REDUCTION; SILICON COMPOUNDS; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL REACTIVITY; DENSITY FUNCTIONAL CALCULATION; NEAR EDGE EXTENDED X RAY ABSORPTION FINE STRUCTURE; OXYGEN PASSIVATED COPPER SURFACE; SILICON MONOXIDE LAYERS; SYNCHROTRON PHOTOEMISSION;

COPPER;

EID: 0033722713     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00443-X     Document Type: Article

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