Bandgap narrowing in high dopant tin oxide degenerate thin film produced by atmosphere pressure chemical vapor deposition

Applied Physics Letters

Volumn 102, Issue 11, 2013, Pages

  Lin, Yang Yi ^a   Lee, Hsin Yi ^b   Ku, Ching Shun ^b   Chou, Li Wei ^a   Wu, Albert T ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY-DOPED TIN OXIDE; ATMOSPHERE PRESSURE CHEMICAL VAPOR DEPOSITIONS; ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; BAND GAP NARROWING; DEGENERATE THIN FILMS; EFFECTIVE MASS; FIGURE OF MERITS; REDUCED RESISTIVITY;

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; ENERGY GAP; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; THIN FILMS; TIN; VAPORS;

TIN OXIDES;

EID: 84875718368     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4798253     Document Type: Article

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