-
1
-
-
0001809571
-
Conduction and gas response of semiconductor gas sensors
-
P.T. Mosley, Adam Hilger Bristol
-
D.E. Williams Conduction and gas response of semiconductor gas sensors P.T. Mosley, Solid State Gas Sensors 1987 Adam Hilger Bristol 71 123
-
(1987)
Solid State Gas Sensors
, pp. 71-123
-
-
Williams, D.E.1
-
3
-
-
0035731839
-
Conduction model of metal oxide gas sensors
-
DOI 10.1023/A:1014405811371
-
N. Barsan, and U. Weimar Conduction model of metal oxide gas sensors Journal of Electroceramics 7 2001 143 167 (Pubitemid 34288261)
-
(2001)
Journal of Electroceramics
, vol.7
, Issue.3
, pp. 143-167
-
-
Barsan, N.1
Weimar, U.2
-
4
-
-
68949107953
-
Receptor function and response of semiconductor gas sensor
-
10.1155/2009/875704 Article ID 875704
-
Noboru Yamazoe, and Kengo Shimanoe Receptor function and response of semiconductor gas sensor Journal of Sensors 2009 2009 10.1155/2009/875704 Article ID 875704
-
(2009)
Journal of Sensors
, vol.2009
-
-
Yamazoe, N.1
Shimanoe, K.2
-
6
-
-
3943058797
-
Effect of adsorbates and insulating layers on the conductance of plasma deposited a-Si:H
-
DOI 10.1016/0022-3093(80)90656-0
-
M. Tanielian, M. Chatani, H. Fritzsche, V. Smid, and P.D. Persans Effect of adsorbates and insulating layers on the conductance of plasma deposited a-Si:H Journal of Non-Crystalline Solids 35/36 1980 575 580 (Pubitemid 10470293)
-
(1979)
Journal of Non-Crystalline Solids
, vol.35-36
, Issue.PART 1
, pp. 575-580
-
-
Tanielian, M.1
Chatani, M.2
Fritzsche, H.3
Smid, V.4
Persans, P.D.5
-
9
-
-
21544465526
-
Hydrogen passivation of electrically active defects in diamond
-
M.I. Landstrass, and K.V. Ravi Hydrogen passivation of electrically active defects in diamond Applied Physics Letters 55 1989 1391 1393
-
(1989)
Applied Physics Letters
, vol.55
, pp. 1391-1393
-
-
Landstrass, M.I.1
Ravi, K.V.2
-
10
-
-
0026932016
-
Hydrogenating effect of single-crystal diamond surface
-
T. Maki, S. Shikama, M. Komori, Y. Sakaguchi, K. Sakuta, and T. Kobayashi Hydrogenating effect of single-crystal diamond surface Japanese Journal of Applied Physics 31 1992 L1446 L1449
-
(1992)
Japanese Journal of Applied Physics
, vol.31
-
-
Maki, T.1
Shikama, S.2
Komori, M.3
Sakaguchi, Y.4
Sakuta, K.5
Kobayashi, T.6
-
11
-
-
0031358780
-
Enhancement/depletion surface channel field effect transistors of diamond and their logic circuits
-
A. Hokazono, and H. Kawarada Enhancement/depletion surface channel field effect transistors of diamond and their logic circuits Japanese Journal of Applied Physics 36 1997 7133 7139
-
(1997)
Japanese Journal of Applied Physics
, vol.36
, pp. 7133-7139
-
-
Hokazono, A.1
Kawarada, H.2
-
12
-
-
0001747031
-
Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements
-
DOI 10.1063/1.116690, PII S0003695196033037
-
K. Hayashi, S. Yamanaka, H. Okushi, and K. Kajimura Study of the effect of hydrogen on transport properties in chemical vapour deposited diamond films by Hall measurements Applied Physics Letters 68 1996 376 378 (Pubitemid 126683732)
-
(1996)
Applied Physics Letters
, vol.68
, Issue.3
, pp. 376-378
-
-
Hayashi, K.1
Yamanaka, S.2
Okushi, H.3
Kajimura, K.4
-
13
-
-
18144443712
-
Origin of surface conductivity in diamond
-
F. Maier, M. Riedel, B. Mantel, J. Ristein, and L. Ley Origin of surface conductivity in diamond Physical Review Letters 85 2000 3472
-
(2000)
Physical Review Letters
, vol.85
, pp. 3472
-
-
Maier, F.1
Riedel, M.2
Mantel, B.3
Ristein, J.4
Ley, L.5
-
14
-
-
85008030860
-
Gas sensing interactions at hydrogenated diamond surfaces
-
A. Helwig, G. Müller, O. Weidemann, A. Härtl, J.A. Garrido, and M. Eickhoff Gas sensing interactions at hydrogenated diamond surfaces IEEE Sensors Journal 7 2007 1349 1353
-
(2007)
IEEE Sensors Journal
, vol.7
, pp. 1349-1353
-
-
Helwig, A.1
Müller, G.2
Weidemann, O.3
Härtl, A.4
Garrido, J.A.5
Eickhoff, M.6
-
16
-
-
36749055786
-
Chemical gases sensing properties of diamond nanocone arrays formed by plasma etching
-
Q. Wang, S.L. Qu, S.Y. Fu, W.J. Liu, J.J. Li, and C.Z. Gu Chemical gases sensing properties of diamond nanocone arrays formed by plasma etching Journal of Applied Physics 102 2007 103714 103724
-
(2007)
Journal of Applied Physics
, vol.102
, pp. 103714-103724
-
-
Wang, Q.1
Qu, S.L.2
Fu, S.Y.3
Liu, W.J.4
Li, J.J.5
Gu, C.Z.6
-
17
-
-
74849128206
-
Gas sensing properties of nanocrystalline diamond films
-
A. Kromka, M. Davydova, B. Rezek, M. Vanecek, M. Stuchlik, P. Exnar, and M. Kalbac Gas sensing properties of nanocrystalline diamond films Diamond and Related Materials 19 2010 196 200
-
(2010)
Diamond and Related Materials
, vol.19
, pp. 196-200
-
-
Kromka, A.1
Davydova, M.2
Rezek, B.3
Vanecek, M.4
Stuchlik, M.5
Exnar, P.6
Kalbac, M.7
-
18
-
-
84856520203
-
Temperature enhanced gas sensing properties of diamond films
-
M. Davydova, M. Stuchlik, B. Rezek, and A. Kromka Temperature enhanced gas sensing properties of diamond films Vacuum 86 2012 599 602
-
(2012)
Vacuum
, vol.86
, pp. 599-602
-
-
Davydova, M.1
Stuchlik, M.2
Rezek, B.3
Kromka, A.4
-
19
-
-
68949122474
-
On the low-temperature response of semiconductor gas sensors
-
10.1155/2009/620720 Article ID 620720
-
A. Helwig, G. Müller, G. Sberveglieri, and M. Eickhoff On the low-temperature response of semiconductor gas sensors Journal of Sensors 2009 2009 10.1155/2009/620720 Article ID 620720
-
(2009)
Journal of Sensors
, vol.2009
-
-
Helwig, A.1
Müller, G.2
Sberveglieri, G.3
Eickhoff, M.4
-
21
-
-
84858965315
-
x sensor: Measuring both the accumulated amount and instantaneous level at low concentrations
-
doi:10.3390/s120302831
-
x sensor: measuring both the accumulated amount and instantaneous level at low concentrations Sensors 12 2012 2831 2850 doi:10.3390/s120302831
-
(2012)
Sensors
, vol.12
, pp. 2831-2850
-
-
Groß, A.1
Beulertz, G.2
Marr, I.3
Kubinski, D.J.4
Visser, J.H.5
Moos, R.6
-
22
-
-
84880923533
-
Breathing mode gas detection
-
doi:10.1016/j.snb.2012.07.088 in press
-
A. Helwig, S. Beer, G. Müller, Breathing mode gas detection, Sensors and Actuators B, http://dx.doi.org/10.1016/j.snb.2012.07.088, in press.
-
Sensors and Actuators B
-
-
Helwig, A.1
-
23
-
-
84875475724
-
-
http://depts.washington.edu/eooptic/links/acidstrength.html.
-
-
-
-
24
-
-
84875447071
-
-
http://www.semiconductors.co.uk.
-
-
-
-
25
-
-
62149109219
-
High hole mobility in boron doped diamond for power device applications
-
http://dx.doi.org/10.1063/1.3086397
-
Volpe Pierre-Nicolas, Pernot Julien, Muret Pierre, and Omnès Franck High hole mobility in boron doped diamond for power device applications Applied Physics Letters 94 2009 092102 http://dx.doi.org/10.1063/1.3086397
-
(2009)
Applied Physics Letters
, vol.94
, pp. 092102
-
-
Pierre-Nicolas, V.1
Julien, P.2
Pierre, M.3
Franck, O.4
-
26
-
-
34548485074
-
2 gas sensors as determined by the moving gas outlet technique
-
DOI 10.1016/j.snb.2006.11.032, PII S0925400506007738, Functional Materials for Micro and Nanosystems EMRS
-
2 gas sensors as determined by the moving gas outlet technique Sensors and Actuators B126 2007 174 180 (Pubitemid 47374470)
-
(2007)
Sensors and Actuators, B: Chemical
, vol.126
, Issue.1
, pp. 174-180
-
-
Helwig, A.1
Muller, G.2
Sberveglieri, G.3
Faglia, G.4
-
27
-
-
84875431964
-
-
Eq. (A7) contains an Arrhenius-type approximation to tabulated water vapour pressure data: http://www.engineeringtoolbox.com/water-vapor-saturation- pressure-d-599.html.
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