Electric-double-layer transistors with thin crystals of FeSe 1-xTex (x=0.9 and 1.0)

Applied Physics Letters

Volumn 102, Issue 10, 2013, Pages

  Eguchi, R ^a   Senda, M ^a   Uesugi, E ^a   Goto, H ^a   Kambe, T ^a   Noji, T ^b   Koike, Y ^b   Fujiwara, A ^c   Kubozono, Y ^a  

^a OKAYAMA UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL REGION; HALL COEFFICIENT; HOLE CARRIERS; MOBILE CARRIERS; NORMALLY ON; ROOM TEMPERATURE; SEMIMETALLIC ELECTRONIC STRUCTURE; THIN CRYSTAL;

FIELD EFFECT TRANSISTORS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84875135431     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4795626     Document Type: Article

References (23)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896
2. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, and A. A. Firsov, Nature 438, 197 (2005). 10.1038/nature04233
3. Y. Zhang, Y.-W. Tan, H. L. Stormer, and P. Kim, Nature 438, 201 (2005). 10.1038/nature04235
4. J. G. Checkelsky, Y. S. Hor, R. J. Cava, and N. P. Ong, Phys. Rev. Lett. 106, 196801 (2011). 10.1103/PhysRevLett.106.196801
5. P. Wei, Z. Wang, X. Liu, V. Aji, and J. Shi, Phys. Rev. B 85, 201402 (2012). 10.1103/PhysRevB.85.201402
6. Z.-Y. Wang, P. Wei, and J. Shi, Front. Phys. 7, 160 (2012). 10.1007/s11467-011-0196-x
7. D. Kim, S. Cho, N. P. Butch, P. Syers, K. Kirshenbaum, S. Adam, J. Paglione, and M. S. Fuhrer, Nat. Phys. 8, 459 (2012). 10.1038/nphys2286
8. H. T. Yuan, M. Toh, K. Morimoto, W. Tan, F. Wei, H. Shimotani, Ch. Kloc, and Y. Iwasa, Appl. Phys. Lett. 98, 012102 (2011). 10.1063/1.3535613
9. J. T. Ye, Y. J. Zhang, R. Akashi, M. S. Bahramy, R. Arita, and Y. Iwasa, Science 338, 1193 (2012). 10.1126/science.1228006
10. K. F. Mak, C. H. Lui, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 102, 256405 (2009). 10.1103/PhysRevLett.102.256405
11. C. H. Lui, Z. Li, K. F. Mak, E. Cappelluti, and T. F. Heinz, Nat. Phys. 7, 944 (2011). 10.1038/nphys2102
12. Y. Mizuguchi and Y. J. Takano, J. Phys. Soc. Jpn. 79, 102001 (2010). 10.1143/JPSJ.79.102001
13. T. Noji, T. Suzuki, H. Abe, T. Adachi, M. Kato, and Y. Koike, J. Phys. Soc. Jpn. 79, 084711 (2010). 10.1143/JPSJ.79.084711
14. Y. Mizuguchi, T. Watanabe, H. Okazaki, T. Yamaguchi, Y. Takano, and O. Miura, Jpn. J. Appl. Phys., Part 1 50, 088003 (2011). 10.1143/JJAP.50.088003
15. H. Okazaki, T. Watanabe, T. Yamaguchi, Y. Kawasaki, K. Deguchi, S. Demura, T. Ozaki, S. J. Denholme, Y. Mizuguchi, H. Takeya, and Y. Takano, J. Phys. Soc. Jpn. 81, 113707 (2012). 10.1143/JPSJ.81.113707
16. x (x = 1.0, 0.95, and 0.9) (unpublished).
17. A. Subedi, L. Zhang, D. J. Singh, and M. H. Du, Phys. Rev. B 78, 134514 (2008). 10.1103/PhysRevB.78.134514
18. S. Shimizu, R. Yoshimi, T. Hatano, K. S. Takahashi, A. Tsukazaki, M. Kawasaki, Y. Iwasa, and Y. Tokura, Phys. Rev. B 86, 045319 (2012). 10.1103/PhysRevB.86.045319
19. Y. Kaji, K. Ogawa, R. Eguchi, H. Goto, Y. Sugawara, T. Kambe, K. Akaike, S. Gohda, A. Fujiwara, and Y. Kubozono, Org. Electron. 12, 2076 (2011). 10.1016/j.orgel.2011.08.016
20. I. Tsukada, M. Hanawa, S. Komiya, A. Ichinose, T. Akiike, Y. Imai, and A. Maeda, Physica C 471, 625 (2011). 10.1016/j.physc.2011.05.012
21. I. Tsukada, M. Hanawa, S. Komiya, A. Ichinose, T. Akiike, Y. Imai, and A. Maeda, J. Phys. Soc. Jpn. 80, 023712 (2011). 10.1143/JPSJ.80.023712
22. F. Ma, W. Ji, J. Hu, Z.-Y. Lu, and X. Tao, Phys. Rev. Lett. 102, 177003 (2009). 10.1103/PhysRevLett.102.177003
23. A. Tamai, A. Y. Ganin, E. Rozbicki, J. Bacsa, W. Meevasana, P. D. C. King, M. Caffio, R. Schaub, S. Margadonna, K. Prassides, M. J. Rosseinsky, and F. Baumberger, Phys. Rev. Lett. 104, 097002 (2010). 10.1103/PhysRevLett.104. 097002