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Journal of the Physical Society of Japan

Volumn 80, Issue 2, 2011, Pages

Mobility analysis of FeTe thin films

(7) Tsukada, Ichiro a,c Hanawa, Masafumi a,c Komiya, Seiki a,c Ichinose, Ataru a,c Akiike, Takanori b,c Imai, Yoshinori b,c Maeda, Atsutaka b,c

a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY (Japan)

b UNIVERSITY OF TOKYO (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

FeTe; Hall effect; Iron chalcogenide; Thin films; Two band model

Indexed keywords

EID: 79951631361 PISSN: 00319015 EISSN: 13474073 Source Type: Journal
DOI: 10.1143/JPSJ.80.023712 Document Type: Article

Times cited : (15)

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