Light extraction efficiency analysis of GaN-based light-emitting diodes with nanopatterned sapphire substrates

Applied Optics

Volumn 52, Issue 7, 2013, Pages 1358-1367

  Pan, Jui Wen ^a,b   Tsai, Pei Jung ^a   Chang, Kao Der ^c   Chang, Yung Yuan ^d  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHI MEI MEDICAL CENTER   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^d Procrystal Technology Co Ltd   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; EXTRACTION; FINITE DIFFERENCE TIME DOMAIN METHOD; GALLIUM ALLOYS; LIGHT; OPTIMAL SYSTEMS; SAPPHIRE; TIME DOMAIN ANALYSIS;

3D FDTD SIMULATIONS; COMPUTATIONAL MEMORY; FINITE-DIFFERENCE TIME-DOMAIN SIMULATION; GAN-BASED LIGHT-EMITTING DIODES; LIGHT EXTRACTION EFFICIENCY (LEE); LIGHT-EXTRACTION EFFICIENCY; RIGOROUS COUPLED WAVE ANALYSIS; SAPPHIRE SUBSTRATES;

LIGHT EMITTING DIODES;

EID: 84875033563     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.52.001358     Document Type: Article

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