High-energy-density sol-gel thin film based on neat 2- cyanoethyltrimethoxysilane

ACS Applied Materials and Interfaces

Volumn 5, Issue 5, 2013, Pages 1544-1547

  Kim, Yunsang ^a,b   Kathaperumal, Mohanalingam ^a   Smith, O'Neil L ^a   Pan, Ming Jen ^c   Cai, Ye ^a,b   Sandhage, Kenneth H ^a,b   Perry, Joseph W ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

capacitors; electric breakdown strength; high energy density materials; high k dielectric; pulsed power applications; sol gel dielectric

Indexed keywords

DIELECTRIC THIN FILMS; ELECTRIC BREAKDOWN STRENGTH; HIGH ENERGY DENSITIES; HIGH ENERGY DENSITY MATERIALS; HIGH-K DIELECTRIC; HYBRID ORGANIC-INORGANIC; PULSED POWER APPLICATIONS; RELATIVE PERMITTIVITY;

CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; FILMS; PERMITTIVITY; POLARIZATION; SOL-GEL PROCESS;

SOL-GELS;

SILANE DERIVATIVE; TRIMETHOXYSILANE;

ARTICLE; CHEMISTRY; ELECTRIC CAPACITANCE; ELECTRICITY; MATERIALS TESTING; PHASE TRANSITION;

ELECTRIC CAPACITANCE; ELECTRICITY; MATERIALS TESTING; PHASE TRANSITION; SILANES;

EID: 84875027613     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am303162u     Document Type: Article

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