Field effect transport properties of electrochemically prepared graphene quantum dots

Proceedings - Winter Simulation Conference

Volumn , Issue , 2013, Pages 463-465

  Kalita, Hemen ^a   Harikrishnan, V ^a   Aslam, M ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

adsorbates; Graphene; hole dopant; mobility; p type; quantum dots

Indexed keywords

AMBIENT CONDITIONS; AMBIPOLAR TRANSPORT; ARGON ATMOSPHERES; AVERAGE DIAMETER; FIELD EFFECT TRANSPORT; FIELD EFFECTS; P-TYPE;

ADSORBATES; CARRIER MOBILITY; HOLE MOBILITY; NANOELECTRONICS; SEMICONDUCTOR QUANTUM DOTS; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 84874787944     PISSN: 08917736     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/INEC.2013.6466078     Document Type: Conference Paper

References (16)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva and A. A. Firsov, Science, vol. 306, pp. 666-669, Oct. 2004.
2. F. Schedin, A. K. Geim, S. V. Morozov, E. W. Hill, P. Blake, M. I. Katsnelson and K. S. Novoselov, Nat. Mater., vol. 6, pp. 652-655, Sep. 2007.
3. X. C. Dong, Y. M. Shi, Y. Zhao, D. M. Chen, J. Ye, Y. G. Yao, F. Gao, Z. H. Ni, T. Yu, Z. X. Shen, Y. X. Huang, P. Chen and L. J. Li, Phys. Rev. Lett., vol. 102, pp. 135501-1-135501-4, Mar. 2009.
4. N. Tombros, C. Jozsa, M. Popinciuc, H. T. Jonkman and B. J. Van Wees, Nature, vol. 448, pp. 571-574, Aug. 2007.
5. X. C. Dong, Y. M. Shi, W. Huang, P. Chen and L. J. Li, Adv. Mater., vol. 22, pp. 1-5, 2010. DOI: 10. 1002/adma. 200903645.
6. A. K. Geim and K. S. Novoselov, Nat. Mater., vol. 6, pp183-191, 2007.
7. K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, H. L. Stormer, Solid State Commun., vol. 146 , pp. 351-355, 2008.
8. S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, J. A. Jaszczak and A. K. Geim, Phys. Rev. Lett., vol. 100 , pp. 016602-016605, 2008.
9. D. Stoller, S. J. Park, Y. W. Zhu, J. H. An and R. S. Ruoff, Nano Lett. vol. 8, pp. 3498-3502, 2008.
10. B. Seger and P. V. Kamat, J. Phys. Chem. C., vol. 113, pp. 7990-7995, 2009.
11. Xuesong Li, Yanwu Zhu, Weiwei Cai, Mark Borysiak, Boyang Han, David Chen, Richard D. Piner, Luigi Colombo and Rodney S. Ruoff, Nano Lett., vol. 9, pp. 4359-4363, 2009.
12. Augustin J. Hong, Emil B. Song, Hyung Suk Yu, Matthew J. Allen, Jiyoung Kim, Jesse D. Fowler, Jonathan K. Wassei, Youngju Park, Yong Wang, Jin Zou, Richard B. Kaner, Bruce H. Weiller and Kang L. Wang, ACS Nano., vol. 5, pp. 7812-7817, 2011.
13. B. Huard, J. Sulpizio, N. Stander, K. Todd, B. Yang, and D. Goldhaber-Gordon, Phys. Rev. Lett., vol. 98, no. 23, p. 236 803, Jun. 2007.
14. M. C. Lemme, T. Echtermeyer, M. Baus and H. Kurz, IEEE Electron Device Lett., vol. 28, no. 4, pp. 282-284, Apr. 2007.
15. Jesse D. Fowler, Matthew J. Allen, Vincent C. Tung, Yang Yang, Richard B. Kaner and Bruce H. Weiller, ACS Nano, vol. 3, pp. 301-306, 2009.
16. D. B. Shinde and V. K. Pillai, Chem. Eur. J. 18, 12522 (2012).