Influence of trap depth on charge transport in inverted bulk heterojunction solar cells employing zno as electron transport layer

Proceedings - Winter Simulation Conference

Volumn , Issue , 2013, Pages 346-349

  Elumalai, Naveen Kumar ^a,b   Vijila, Chellappan ^a   Sridhar, Arthi ^b   Ramakrishna, Seeram ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Electron selective layer; Solution processed; Temperature dependence; Trap depth; Zinc Oxide

Indexed keywords

BULK HETEROJUNCTION SOLAR CELLS; CHARGE TRANSPORT PROCESS; CURRENT-VOLTAGE MEASUREMENTS; DEVICE PERFORMANCE; DEVICE STRUCTURES; ELECTRON TRANSPORT LAYERS; ILLUMINATION INTENSITY; INVERTED ORGANIC SOLAR CELLS; LOW TEMPERATURE SOLUTIONS; METHYL ESTERS; OPTIMIZED DEVICES; PHOTOVOLTAIC PARAMETERS; POLY-3-HEXYLTHIOPHENE; SELECTIVE LAYERS; SOLUTION-PROCESSED; TEMPERATURE DEPENDENCE; TRAP DEPTH; TRAP STATE; ZNO; ZNO INTERLAYERS;

FILM THICKNESS; HETEROJUNCTIONS; MOLYBDENUM OXIDE; NANOELECTRONICS; SOLAR CELLS;

ZINC OXIDE;

EID: 84874774289     PISSN: 08917736     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/INEC.2013.6466043     Document Type: Conference Paper

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