Role of ZnO electron-selective layers in regular and inverted bulk heterojunction solar cells

Journal of Physical Chemistry Letters

Volumn 2, Issue 5, 2011, Pages 407-411

  Boix, Pablo P ^a   Ajuria, Jon ^b   Etxebarria, Ikerne ^b   Pacios, Roberto ^b   Garcia Belmonte, Germà ^a   Bisquert, Juan ^a  

^a UNIVERSITAT JAUME I   (Spain)

^b IK4 IKERLAN   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BULK HETEROJUNCTION; BULK HETEROJUNCTION SOLAR CELLS; CAPACITANCE METHOD; ENERGY REFERENCE; FILM MORPHOLOGY; FLAT BAND; HIGHEST OCCUPIED MOLECULAR ORBITAL; IMPEDANCE SPECTROSCOPY; METAL OXIDES; MOTT-SCHOTTKY; OPERATING MECHANISM; P-DOPING; PHASE SEGREGATIONS; POLYMER-FULLERENE; REGULAR STRUCTURE; SELECTIVE LAYERS; SUN ILLUMINATION; ZNO; ZNO LAYERS;

CAPACITANCE; FERMI LEVEL; METALLIC COMPOUNDS; MOLECULAR ORBITALS; OPEN CIRCUIT VOLTAGE; PHASE SEPARATION; SEMICONDUCTOR DOPING; SOLAR CELLS; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 79952349225     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz200045x     Document Type: Article

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