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Volumn 41, Issue 1, 2012, Pages
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GaAs clean up studied with synchrotron radiation photoemission
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL CHANGE;
CHEMICAL COMPOSITIONS;
DENSITY OF DEFECTS;
GAAS;
GAAS SURFACES;
INCIDENT PHOTON ENERGY;
NATIVE OXIDES;
OXYGEN SOURCES;
SURFACES AND INTERFACES;
SYNCHROTRON RADIATION PHOTOEMISSION;
SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY;
ADSORPTION;
ATOMIC LAYER DEPOSITION;
ELECTRONIC PROPERTIES;
GALLIUM ARSENIDE;
INTERFACES (MATERIALS);
MICROELECTRONICS;
SEMICONDUCTING GALLIUM;
SILICON;
SYNCHROTRON RADIATION;
SURFACES;
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EID: 84874542014
PISSN: 17578981
EISSN: 1757899X
Source Type: Conference Proceeding
DOI: 10.1088/1757-899X/41/1/012003 Document Type: Conference Paper |
Times cited : (3)
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References (12)
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