Short-circuit behaviour of high-voltage IGBTs in circuits with di/dt snubbers

PCIM Europe Conference Proceedings

Volumn , Issue , 2012, Pages 808-814

  Basler, Thomas ^a   Bruckner, Thomas ^b   Jakob, Roland ^b   Sadowski, Piotr ^b   Junge, Günter ^b   Lutz, Josef ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b GE ENERGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLLECTOR-EMITTER VOLTAGE; DESATURATION; FAST DETECTIONS; HIGH VOLTAGE; HIGH-VOLTAGES; IGBT-CHIP;

ENERGY MANAGEMENT; EXHIBITIONS; INTELLIGENT ROBOTS;

POWER ELECTRONICS;

EID: 84874133887     PISSN: None     EISSN: 21913358     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. R. Alvarez, S. Bernet, L. Lindenmueller, and F. Filsecker. Characterization of a New 4.5 kV Press Pack SPT+ IGBT in Voltage Source Converters with Clamp Circuit. In Industrial Technology (ICIT), 2010 IEEE International Conference on, pages 702-709, march 2010.
2. S. Bernet. Recent Developments of High Power Converters for Industry and Traction Applications. Power Electronics, IEEE Transactions on, 15(6):1102 -1117, Nov. 2000.
3. H.-G. Eckel and L. Sack. Experimental investigation on the behaviour of IGBT at short- circuit during the on-state. In Industrial Electronics, Control and Instrumentation, 1994. IECON '94., 20th International Conference on, volume 1, pages 118 -123 vol.1, September 1994.
4. Lutz, J. and Dobler, R. and Mari, J. and Menzel, M. Short circuit III in high power IGBTs. In Power Electronics and Applications, 2009. EPE '09. 13th European Conference on, pages 1 -8, 2009.
5. Steffen Pierstorf, Hans-Gunter Eckel. Different Short Circuit Types of IGBT Voltage Source Inverters. PCIM, 2011.
6. Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker. Semiconductor Power Devices - Physics, Characteristics, Reliability. Springer Verlag, 2011.
7. J. Schumann, S. Pierstorf, H.-G. Eckel. Influence of the Gate Drive on the Short-Circuit Type II and Type III Behaviour of HV-IGBT. PCIM, 2010.
8. S. Musumeci, R. Pagano, A. Raciti, F. Frisina, M. Melito. Transient Behavior of IGBTs Submitted to Fault Under Load Conditions. Industry Applications Conference 37th IAS Annual Meeting, 2002.
9. T. Basler, J. Lutz, T. Brückner, R. Jakob. IGBT Self-Turn-Off under Short-Circuit Condition. 10th International Seminar on Power Semiconductors, 2010.
10. Jürgen Böhmer, Jörg Schumann, and Hans-Günter Eckel. Negative differential miller capacitance during switching transients of IGBTs. In Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on, pages 1 -9, 30 2011-sept. 1 2011.
11. J. Lee and D. Hyun. Gate Voltage Pattern Analyze for Short-Circuit Protection in IGBT In-verters. In PESC Record - IEEE Annual Power Electronics Specialists Conference, pages 1913-1917, 2007.
12. Byoung-Gun Park, Jun-Bae Lee, and Dong-Seok Hyun. A Novel Short-Circuit Detecting Scheme Using Turn-on Switching Characteristic of IGBT. Conference Recording Annu. Meeting IEEE IAS, 2008.