Negative differential miller capacitance during switching transients of IGBTs

Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011

Volumn , Issue , 2011, Pages

  Böhmer, Jürgen ^a   Schumann, Jörg ^a   Eckel, Hans Günter ^a  

^a UNIVERSITY OF ROSTOCK   (Germany)

Author keywords

IGBT; MOS device

Indexed keywords

COLLECTOR CURRENTS; DIFFERENTIAL CAPACITANCE; GATE DRIVES; MILLER CAPACITANCE; SWITCHING TRANSIENT;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MOS DEVICES; POWER ELECTRONICS; POWER QUALITY;

CAPACITANCE;

EID: 80053520305     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. R.-D. Klug, N. Klaassen, "High Power Medium Voltage Drives - Innovations, Portfolio, Trends", EPE2005, Dresden, Germany.
2. H.-G. Eckel, M. M. Bakran, E. U. Krafft, A. Nagel, "A new Family of Modular IGBT Converters for Traction Applications", EPE2005, Dresden, Germany.
3. J. Lutz, "Entwicklungstrends bei Halbleiter-Bauelementen für die Traktionstechnik", Elektrische Bahnen, 3/07, pp. 130 - 137.
4. M. Rahimo, S. Klaka, "High Voltage Semiconductor Technologies", EPE2009, Barcelona, Spain.
5. H.-G. Eckel, K. Fleisch, "Turn-off behaviour of high voltage NPT- and FS-IGBT", EPE-PEMC 2008, Poznan, Poland.
6. T. Basler, J. Lutz, T. Brückner, R. Jakob, "IGBT Self-Turn-Off under Short-Circuit Condition", ISPS 2010, Prague, Czech Republic.