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Journal of Physics and Chemistry of Solids

Volumn 74, Issue 4, 2013, Pages 599-604

Doping level influence on chemical surface of diamond electrodes

(3) Azevedo, A F a Baldan, M R a Ferreira, N G a

a INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS (Brazil)

Author keywords

A. Semiconductors; C. Raman spectroscopy; D. Electrochemical properties; D. Surface properties

Indexed keywords

BORON-DOPED DIAMOND FILMS; CHEMICAL SURFACES; DIAMOND ELECTRODE; DIAMOND MORPHOLOGY; DOPING LEVELS; ELECTROCHEMICAL RESPONSE; FILM SURFACES; HOT-FILAMENT CHEMICAL VAPOR DEPOSITION; MOTT-SCHOTTKY PLOTS; POTENTIAL WINDOWS; RAMAN SCATTERING SPECTROSCOPY; SURFACE BONDS; SYNCHROTRON X-RAY PHOTOELECTRON SPECTROSCOPIES;

CHEMICAL VAPOR DEPOSITION; CONTACT ANGLE; CYCLIC VOLTAMMETRY; DIAMONDS; ELECTRODES; METHANOL; PHOTOELECTRONS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTOR DOPING;

EID: 84874110359 PISSN: 00223697 EISSN: None Source Type: Journal
DOI: 10.1016/j.jpcs.2012.12.013 Document Type: Article

Times cited : (39)

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