Temperature dependent reversal of voltage modulated light emission and negative capacitance in AlGaInP based multi quantum well light emitting devices

Applied Physics Letters

Volumn 102, Issue 5, 2013, Pages

  Bansal, Kanika ^a   Datta, Shouvik ^a  

^a INDIAN INSTITUTE OF SCIENCE EDUCATION AND RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAINP; CARRIER ESCAPES; CONTINUOUS WAVE LIGHTS; ELECTROLUMINESCENT DIODES; ELECTRONIC AND OPTICAL PROPERTIES; LIGHT EMITTING DEVICES; MODULATED LIGHT; MULTIQUANTUM WELLS; NEGATIVE CAPACITANCE; OPERATING TEMPERATURE; RADIATIVE RECOMBINATION; ROOM TEMPERATURE; TEMPERATURE DEPENDENT; TEMPERATURE VARIATION;

CAPACITANCE; ELECTROLUMINESCENCE; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE DISTRIBUTION;

LIGHT EMISSION;

EID: 84874068674     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4790609     Document Type: Article

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