Polyacetylene p-n junctions with varying dopant density by polyelectrolyte-mediated electrochemistry

Journal of Physical Chemistry C

Volumn 117, Issue 4, 2013, Pages 1600-1610

  Robinson, Stephen G ^a   Lonergan, Mark C ^a  

^a UNIVERSITY OF OREGON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER STRUCTURE; CONSTITUENT MATERIALS; CURRENT VOLTAGE; CURRENT VOLTAGE CURVE; DEPLETION LAYER; ELECTRODE POTENTIALS; EXCHANGE CURRENT DENSITIES; FRONTIER ORBITALS; FUNCTIONALIZED; N-TYPE LAYERS; ORGANIC PHOTOVOLTAICS; P-N JUNCTION; RECTIFICATION RATIO; SELECTIVE FORMATION; SUPPORTING ELECTROLYTE; VOLTAGE-DEPENDENT CAPACITANCES;

ACETYLENE; ELECTRIC RECTIFIERS; ELECTROCHEMISTRY; FUNCTIONAL GROUPS; ION EXCHANGE; POLYACETYLENES; POLYELECTROLYTES;

SEMICONDUCTOR JUNCTIONS;

EID: 84874017236     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp309534b     Document Type: Article

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