Photochemical doping of an adaptive mix-conducting p-n junction

Journal of Physical Chemistry Letters

Volumn 1, Issue 4, 2010, Pages 720-723

  Lin, Fuding ^a   Walker, Ethan M ^a   Lonergan, Mark C ^a  

^a UNIVERSITY OF OREGON   (United States)

Author keywords

Energy Conversion and Storage

Indexed keywords

CONSTITUENT MATERIALS; COUNTERIONS; DOPING LEVELS; ELECTRONIC ASYMMETRY; ELECTRONIC CARRIERS; ELECTRONIC CHARGES; ELECTRONIC JUNCTIONS; IN-SITU; IONIC CHARGE CARRIERS; LIGHT INTENSITY; NEAR-INFRARED ABSORPTION; P-N JUNCTION; PHOTO-ELECTRONIC DEVICES; PHOTOGENERATED CARRIERS; PHOTOGENERATED ELECTRONS; PHOTOVOLTAIC RESPONSE; WORKING MECHANISMS;

ACETYLENE; CHARGE CARRIERS; ENERGY CONVERSION; OPTOELECTRONIC DEVICES; SEMICONDUCTOR JUNCTIONS;

IONOMERS;

EID: 77749273673     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz900430y     Document Type: Article

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