-
1
-
-
0000260326
-
Piezo-hall coefficients of n-type silicon
-
July
-
B. Halg, "Piezo-Hall coefficients of n-type silicon," J. Appl. Phys., vol. 64, no. 1, pp. 276-282, July 1988.
-
(1988)
J. Appl. Phys.
, vol.64
, Issue.1
, pp. 276-282
-
-
Halg, B.1
-
2
-
-
27944462267
-
Drift of magnetic sensitivity of smart hall sensors due to moisture absorbed by the IC-package
-
October
-
U. Ausserlechner, M. Motz, and M. Holliber, "Drift of magnetic sensitivity of smart Hall sensors due to moisture absorbed by the IC-package," in Proc. IEEE Sensors, October 2004, pp. 455-458.
-
(2004)
Proc. IEEE Sensors
, pp. 455-458
-
-
Ausserlechner, U.1
Motz, M.2
Holliber, M.3
-
3
-
-
0033741472
-
Short and long-term stability problems of hall plates in plastic packages
-
D. Manic, J. Petr, and R. S. Popovic, "Short and long-term stability problems of Hall plates in plastic packages," in Proc. IEEE 38th Annual Reliability Physics Symposium, 2000, pp. 225-230.
-
(2000)
Proc. IEEE 38th Annual Reliability Physics Symposium
, pp. 225-230
-
-
Manic, D.1
Petr, J.2
Popovic, R.S.3
-
4
-
-
34748909992
-
Compensation of the piezo-hall effect in integrated hall sensors on (100)-si
-
November
-
U. Ausserlechner, M. Motz, and M. Holliber, "Compensation of the piezo-Hall effect in integrated Hall sensors on (100)-Si," IEEE Sensors J., vol. 7, no. 11, pp. 1475-1482, November 2007.
-
(2007)
IEEE Sensors J.
, vol.7
, Issue.11
, pp. 1475-1482
-
-
Ausserlechner, U.1
Motz, M.2
Holliber, M.3
-
5
-
-
0035340235
-
Die stress drift measurement in IC plastic packages using the piezo-hall effect
-
D. Manic, J. Petr, and R. Popovic, "Die stress drift measurement in IC plastic packages using the piezo-Hall effect," Microelectronics Reliability, vol. 41, no. 5, pp. 767 - 771, 2001.
-
(2001)
Microelectronics Reliability
, vol.41
, Issue.5
, pp. 767-771
-
-
Manic, D.1
Petr, J.2
Popovic, R.3
-
6
-
-
33846693940
-
Piezoresistance effect in Germanium and silicon
-
April
-
C. S. Smith, "Piezoresistance effect in germanium and silicon," Phys. Rev., vol. 94, no. 1, pp. 42-49, April 1954.
-
(1954)
Phys. Rev.
, vol.94
, Issue.1
, pp. 42-49
-
-
Smith, C.S.1
-
8
-
-
0019916789
-
A graphical representation of the piezoresistance coefficients in silicon
-
January
-
Y. Kanda, "A graphical representation of the piezoresistance coefficients in silicon," IEEE Trans. Electron Devices, vol. 29, no. 1, pp. 64-70, January 1982.
-
(1982)
IEEE Trans. Electron Devices
, vol.29
, Issue.1
, pp. 64-70
-
-
Kanda, Y.1
-
10
-
-
34249846476
-
Semiconducting stress transducers utilizing the transverse and shear piezoresistance effects
-
Oct.
-
W. G. Pfann and R. N. Thurston, "Semiconducting stress transducers utilizing the transverse and shear piezoresistance effects," J. Appl. Phys., vol. 32, no. 10, pp. 2008-2019, Oct 1961.
-
(1961)
J. Appl. Phys.
, vol.32
, Issue.10
, pp. 2008-2019
-
-
Pfann, W.G.1
Thurston, R.N.2
-
11
-
-
0026219178
-
Piezoresistive stress sensors for structural analysis of electronic packages
-
September
-
D. A. Bittle, J. Suhling, R. E. Beaty, R. C. Jaeger, and R. W. Johnson, "Piezoresistive stress sensors for structural analysis of electronic packages," J. Electronic Packaging, vol. 113, pp. 203-215, September 1991.
-
(1991)
J. Electronic Packaging
, vol.113
, pp. 203-215
-
-
Bittle, D.A.1
Suhling, J.2
Beaty, R.E.3
Jaeger, R.C.4
Johnson, R.W.5
-
12
-
-
0000023102
-
Piezoresistive properties of silicon diffused layers
-
February
-
O. N. Tufte and E. L. Stelzer, "Piezoresistive properties of silicon diffused layers," J. Appl. Phys., vol. 34, no. 2, pp. 313-318, February 1963.
-
(1963)
J. Appl. Phys.
, vol.34
, Issue.2
, pp. 313-318
-
-
Tufte, O.N.1
Stelzer, E.L.2
-
13
-
-
0001477655
-
Piezoresistive properties of heavily doped n-type silicon
-
March
-
-, "Piezoresistive properties of heavily doped n-type silicon," Phys. Rev., vol. 133, no. 6 A, pp. A1705-A1716, March 1964.
-
(1964)
Phys. Rev.
, vol.133
, Issue.6 A
-
-
Tufte, O.N.1
Stelzer, E.L.2
|