Features of the acceptor band and properties of localized carriers from studies of the variable-range hopping conduction in single crystals of p-Cu 2ZnSnS4

Solar Energy Materials and Solar Cells

Volumn 112, Issue , 2013, Pages 127-133

  Lisunov, K G ^a   Guk, M ^a   Nateprov, A ^a   Levcenko, S ^a   Tezlevan, V ^a   Arushanov, E ^a  

^a INSTITUTE OF APPLIED PHYSICS   (Moldova)

Author keywords

Acceptor band; Cu2ZnSnS4; Hopping conduction; Single crystals

Indexed keywords

ACCEPTOR BAND; ACCEPTOR CONCENTRATIONS; BOHR RADIUS; CRITICAL CONCENTRATION; EXPERIMENTAL DATUM; HOPPING CONDUCTION; LATTICE DISORDERS; LOCALIZED CARRIERS; LOCALIZED STATE; MOTT VARIABLE-RANGE HOPPING; TEMPERATURE INTERVALS; TYPICAL VALUES; VARIABLE-RANGE HOPPING CONDUCTION;

SEMICONDUCTOR INSULATOR BOUNDARIES;

SINGLE CRYSTALS;

EID: 84873688055     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.01.027     Document Type: Article

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