Electronic band Gap of ZnO under triaxial strain

Journal Wuhan University of Technology, Materials Science Edition

Volumn 28, Issue 1, 2013, Pages 48-51

  Qin, Guoqiang ^a,b   Zhang, Guanglei ^a,b   Yang, Jinhui ^a   Yu, Gang ^a   Fu, Hua ^a   Ji, Fengqiu ^a  

^a SHIJIAZHUANG TIEDAO UNIVERSITY   (China)

^b YANSHAN UNIVERSITY   (China)

Author keywords

band gap; first principles calculations; strain; ZnO

Indexed keywords

CALCULATIONS; ENERGY GAP; II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; OXIDE MINERALS; SEMICONDUCTING ZINC COMPOUNDS; STRAIN; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE; ZINC SULFIDE;

BIAXIAL STRAINS; COMPRESSIVE STRAIN; DIRECT BAND GAP SEMICONDUCTORS; ELECTRONIC BAND GAPS; FIRST-PRINCIPLES CALCULATION; STRAIN MODEL; THREE-DIMENSIONAL STRAINS; ZNO THIN FILM;

TENSILE STRAIN;

EID: 84873656697     PISSN: 10002413     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11595-013-0638-0     Document Type: Article

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