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1
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0030677606
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High aspect ratio, ultrathick, negative-tone near-UV photoresist for MEMS applications
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San Diego, CA
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M. Despont, H. Lorenz, N. Fahrni, J. Brugger, P. Renaud, and P. Vettiger, "High aspect ratio, ultrathick, negative-tone near-UV photoresist for MEMS applications," in Proc. IEEE MEMS, San Diego, CA, pp. 518-522.
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Proc. IEEE MEMS
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Despont, M.1
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Fahrni, N.3
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Renaud, P.5
Vettiger, P.6
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2
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49949086896
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Fabrication of micro sloping structures of SU-8 by substrate penetration lithography
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Aug
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Onishi, J.1
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3
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0031221057
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SU-8: A low-cost negative resist for MEMS
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PII S0960131797831671
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H. Lorenz, M. Despont, N. Fahrni, N. LaBianca, P. Renaud, and P. Vettiger, "SU-8: A low-cost negative resist for MEMS," J. Micromech. Microeng., vol. 7, no. 3, pp. 121-124, Sep. 1997. (Pubitemid 127607057)
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4
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34247551257
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Combined electron beam and UV lithography in SU-8
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DOI 10.1016/j.mee.2007.01.084, PII S0167931707000950, Proceedings of the 32nd International Conference on Micro- and Nano-Engineering
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M. Gersborg-Hansen, L. H. Thamdrup, A. Mironov, and A. Kristensen, "Combined electron beam and UV lithography in SU-8," Microelectron. Eng., vol. 84, no. 5, pp. 1058-1061, May-Aug. 2007. (Pubitemid 46678338)
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Gersborg-Hansen, M.1
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5
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79953663247
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Dry release of SU-8 structures using OHP transparency as the substrate material
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8
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0033101285
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Wall profile of thick photoresist generated via contact printing
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Y. Cheng, C. Y. Lin, D. H. Wei, B. Loechel, and G. Gruetzner, "Wall profile of thick photoresist generated via contact printing," J. Microelectromech. Syst., vol. 8, no. 1, pp. 18-26, Mar. 1999.
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9
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0036693343
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Reduction of diffraction effect of UV exposure on SU-8 negative thick photoresist by air gap elimination
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Y. J. Chuang, F. G. Tseng, and W. K. Lin, "Reduction of diffraction effect of UV exposure on SU-8 negative thick photoresist by air gap elimination," Microsyst. Technol., vol. 8, no. 4/5, pp. 308-313, 2002.
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0037438784
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A novel fabrication method of embedded micro-channels by using SU-8 thickfilm photoresists
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11
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0017021094
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Photodiodes and junction field-effect transistors with high UV sensitivity
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