RF characterization of gigahertz flexible silicon thin-film transistor on plastic substrates under bending conditions

IEEE Electron Device Letters

Volumn 34, Issue 2, 2013, Pages 262-264

  Qin, Guoxuan ^a   Seo, Jung Hun ^b   Zhang, Yang ^a   Zhou, Han ^b   Zhou, Weidong ^c   Wang, Yuxin ^d   Ma, Jianguo ^a   Ma, Zhenqiang ^b  

^a TIANJIN UNIVERSITY   (China)

^b University of Wisconsin Madison   (United States)

^c University of Texas at Arlington   (United States)

^d Masterwork Machinery Company Ltd   (China)

Author keywords

Bending strain; flexible electronics; modeling; silicon nanomembrane (SiNM); thin film transistor (TFT)

Indexed keywords

ACTIVE DEVICES; BENDING STRAIN; EQUIVALENT CIRCUIT MODEL; MAXIMUM OSCILLATION FREQUENCY; MECHANICAL BENDING; NANOMEMBRANES; PERFORMANCE ENHANCEMENTS; PLASTIC SUBSTRATES; RADIO FREQUENCIES; RF CHARACTERIZATION; THIN-FILM TRANSISTOR (TFTS); UNDERLYING MECHANISM;

CUTOFF FREQUENCY; FLEXIBLE ELECTRONICS; MODELS; STRAIN; SUBSTRATES; THIN FILM TRANSISTORS;

BENDING (DEFORMATION);

EID: 84873057403     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2231853     Document Type: Article

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