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Volumn 97, Issue 23, 2010, Pages

Impact of strain on radio frequency characteristics of flexible microwave single-crystalline silicon nanomembrane p-intrinsic-n diodes on plastic substrates

(5) Qin, Guoxuan a,b Yuan, Hao Chih b Celler, George K c Ma, Jianguo a Ma, Zhenqiang b

a TIANJIN UNIVERSITY (China)

b University of Wisconsin Madison (United States)

c Soitec USA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING STRAIN; DEVICE PARAMETERS; EQUIVALENT CIRCUIT MODEL; NANOMEMBRANES; OPERATION MODE; PERFORMANCE ENHANCEMENTS; PIN DIODE; PLASTIC SUBSTRATES; RADIO FREQUENCIES; RADIO FREQUENCY CHARACTERISTICS; SINGLE CRYSTALLINE SILICON; SINGLE-CRYSTALLINE; UNDERLYING MECHANISM;

CRYSTALLINE MATERIALS; MICROWAVE INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NANOSTRUCTURES; RADIO; RADIO WAVES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SUBSTRATES;

TENSILE STRAIN;

EID: 78650357266 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3521409 Document Type: Article

Times cited : (19)

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