Improved photovoltaic effects in InGaN-based multiple quantum well solar cell with graphene on indium tin oxide nanodot nodes for transparent and current spreading electrode

Applied Physics Letters

Volumn 102, Issue 3, 2013, Pages

  Seo, Tae Hoon ^a   Shim, Jae Phil ^b   Chae, Seung Jin ^c   Shin, Gangu ^a   Kim, Bo Kyoung ^a   Lee, Dong Seon ^b   Lee, Young Hee ^c   Suh, Eun Kyung ^a  

^a Chonbuk National University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER ABSORPTION; CURRENT SPREADING; EXTERNAL QUANTUM EFFICIENCY; HIGH TRANSMITTANCE; INDIUM TIN OXIDE; NANODOTS; POWER CONVERSION EFFICIENCIES;

CONVERSION EFFICIENCY; GALLIUM COMPOUNDS; GRAPHENE; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR QUANTUM WELLS; SOLAR CELLS; TIN; TIN OXIDES;

INDIUM COMPOUNDS;

EID: 84872960397     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4789502     Document Type: Article

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