Modeling of soft-switching losses of IGBTs in high-power high-efficiency dual-active-bridge DC/DC converters

IEEE Transactions on Electron Devices

Volumn 60, Issue 2, 2013, Pages 587-597

  Ortiz, Gabriel ^a   Uemura, Hirofumi ^a   Bortis, Dominik ^a   Kolar, Johann Walter ^a   Apeldoorn, Oscar ^b  

^a ETH ZURICH   (Switzerland)

^b ABB SWITZERLAND LTD   (Switzerland)

Author keywords

Charge carrier lifetime; insulated gate bipolar transistors (IGBT); zero current switching; zero voltage switching

Indexed keywords

DUAL ACTIVE BRIDGES; DYNAMIC BEHAVIORS; HIGH-VOLTAGES; INSULATED GATE; INTERNAL CHARGE; MANDATORY REQUIREMENT; MEDIUM VOLTAGE; RECOMBINATION TIME; SOFT-SWITCHING TECHNIQUE; STORED CHARGE; SWITCHING LOSS; ZERO-CURRENT SWITCHING;

CHARGE CARRIERS; DC-DC CONVERTERS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SOFT SWITCHING;

ZERO VOLTAGE SWITCHING;

EID: 84872873765     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2223215     Document Type: Article

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