Formation and development of dislocation in graphene

Applied Physics Letters

Volumn 102, Issue 2, 2013, Pages

  Lee, Gun Do ^a   Yoon, Euijoon ^a,b   Hwang, Nong Moon ^a   Wang, Cai Zhuang ^c   Ho, Kai Ming ^c  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

^c IOWA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

5-7 PAIR; AB INITIO TOTAL ENERGY; CARBON ATOMS; DEVELOPMENT PROCESS; HEXAGONAL RINGS; TIGHT-BINDING MOLECULAR DYNAMICS SIMULATIONS; VACANCY DEFECTS;

CALCULATIONS; COALESCENCE; MOLECULAR DYNAMICS;

GRAPHENE;

EID: 84872727952     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4775671     Document Type: Article

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29. See supplementary material at http://dx.doi.org/10.1063/1.4775671 E-APPLAB-102-020303 for simulation Videos S1 and S2.