Highly reliable silicon carbide photodiodes for visible-blind ultraviolet detector applications

Journal of Materials Research

Volumn 28, Issue 1, 2013, Pages 33-37

  Prasai, Deepak ^a   John, Wilfred ^a   Weixelbaum, Leonhard ^a   Krügera, Olaf ^a   Wagner, Günter ^b   Sperfeld, Peter ^c   Nowy, Stefan ^c   Friedrich, Dirk ^c   Winter, Stefan ^c   Weiss, Tilman ^d  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^d Sglux GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

IRRADIATION; PHOTODIODES; PHOTOCURRENTS;

4H SILICON CARBIDE; 6H-SILICON CARBIDES; DEVICES UNDER TESTS; MERCURY DISCHARGE LAMPS; PHOTO-AGING TESTS; PHOTOCURRENT RESPONSE; ULTRAVIOLET LIGHTS; UV-LIGHT IRRADIATION;

SILICON CARBIDE;

EID: 84872301799     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: None     Document Type: Article

References (23)

1. E. Monroy, F. Omnes, and F. Calle: Wide-bandgap semiconductor ultraviolet photodetectors. Semicond. Sci. Technol. 18(4), R33-R51 (2003).
2. M. Razeghi and A. Rogalski: Semiconductor ultraviolet detectors. J. Appl. Phys. 79(10), 7433 (1996).
3. F. Scholze, R. Klein, and T. Bock: Irradiation stability of silicon photodiodes for extreme-ultraviolet radiation. Appl. Opt. 42(28), 5621 (2003).
4. L. Werner: Ultraviolet stability of silicon photodiodes. Metrologia 35(4), 407 (1998).
5. D.M. Brown, E.T. Downey, M. Ghezzo, J.W. Kretchmer, R.J. Saia, Y.S. Liu, J.A. Edmond, G. Gati, J.M. Pimbley, and W.E. Schneider: Silicon carbide UV photodiodes. IEEE Trans. Electron Devices 40(2), 325 (1993).
6. J. Edmond, H. Kong, A. Suvorov, D. Waltz, and C. Carter: 6H-Silicon carbide light emitting diodes and UV photodiodes. Phys. Status Solidi A 162(1), 481 (1997).
7. S. Metzger, H. Henschel, O. Köhn, and W. Lennartz: Silicon carbide radiation detector for harsh environments. IEEE Trans. Nucl. Sci. 49(3), 1351 (2002).
8. M. Holz, G. Hultsch, T. Scherg, and R. Rupp: Reliability considerations for recent Infineon SiC diode releases. Microelectron. Reliab. 47(9-11), 1741 (2007).
9. M.A. Borysiewicz, E. Kaminska, M. Mysliwiec, M. Wzorek, A. Kuchuk, A. Barcz, E. Dynowska, M.A. di Forte-Poisson, C. Giesen, and A. Piotrowska: Fundamentals and practice of metal contacts to wide band gap semiconductor devices. Cryst. Res. Technol. 47(3), 261 (2012).
10. B.P. Downey, S.E. Mohney, T.E. Clark, and J.R. Flemish: Reliability of aluminum-bearing ohmic contacts to SiC under high current density. Microelectron. Reliab. 50(12), 1967 (2010).
11. B.P. Downey, J.R. Flemish, B.Z. Liu, T.E. Clark, and S.E. Mohney: Current-induced degradation of nickel ohmic contacts to SiC. J. Electron. Mater. 38(4), 563 (2009).
12. A. Cavallini, A. Castaldini, and F. Nava: On the UV responsivity of neutron-irradiated 4H-SiC. Appl. Phys. Lett. 93(15), 153502 (2008).
13. F. Nava, E. Vittone, P. Vanni, G. Verzellesi, P.G. Fuochi, C. Lanzieri, and M. Glaser: Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays. Nucl. Instrum. Methods Phys. Res., Sect. A 505(3), 645 (2003).
14. A. Sciuto, F. Roccaforte, and V. Raineri: Electro-optical response of ion-irradiated 4H-SiC Schottky ultraviolet photodetectors. Appl. Phys. Lett. 92(9), 093505 (2008).
15. L. Zhang, Y.M. Zhang, Y.M. Zhang, C. Han, and Y.J. Ma: High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact. Chin. Phys. B 18(8), 3490 (2009).
16. F. Moscatelli: Silicon carbide for UV, alpha, beta and X-ray detectors: Results and perspectives. Nucl. Instrum. Methods Phys. Res., Sect. A 583(1), 157 (2007).
17. A. Sciuto, M. Mazzillo, V. Raineri, G. Catania, G. D'Arrigo, and F. Roccaforte: On the aging effects of 4H-SiC Schottky photodiodes under high intensity mercury lamp irradiation. IEEE Photonics Technol. Lett. 22(11), 775 (2010).
18. Y. Goldberg, M.E. Levinshtein, and S.L. Rumyantsev: Silicon Carbide (SiC), in Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe, edited by M.E. Levinshtein, S.L. Rumyantsev, and M.S. Shur (John Wiley & Sons, Inc., New York, 2001), p. 93.
19. K.S. Park, T. Kimoto, and H. Matsunami: High quantum-efficiency 4H-SiC UV photodiode. J. Korean Phys. Soc. 30(1), 123 (1997).
20. G. Wagner, D. Schulz, and D. Siche: Vapor phase growth of epitaxial silicon carbide layers. Prog. Cryst. Growth Charact. Mater. 47(2-3), 139 (2003).
21. J. Crofton, L.M. Porter, and J.R. Williams: The physics of ohmic contacts to SiC. Phys. Status Solidi B 202(1), 581 (1997).
22. T. Ohno: Recent progress in SiC-based device processing. Electron. Commun. Jpn. Part II 82(2), 48 (1999).
23. S. Nowy, B. Barton, S. Pape, P. Sperfeld, D. Friedrich, S. Winter, G. Hopfenmüller, and T. Weiss: Characterization of SiC photodiodes for high irradiance UV radiometers, in Proceedings of NEWRAD2011, edited by S. Park and E. Ikonen. (Aalto University, Espoo, Finland, 2011) p. 203. http://newrad2011. org/NewRAD2011-AbstractCollection-20110704.pdf, see also: http://www.boselec. com/products/documents/CharacterizationofSiC photodiodesforhighirradianceUVradiometersPTB2011-POSTER.pdf.