SCOPUS 정보 검색 플랫폼

Volumn 14, Issue 2, 2013, Pages 475-478

Reduced contact resistance and highly stable operation in polymer thin-film transistor with aqueous MoOx solution contact treatment

(3) Kumaki, Daisuke a Fujisaki, Yoshihide b Tokito, Shizuo a

a YAMAGATA UNIVERSITY (Japan)

b NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES (Japan)

Author keywords

Bias stress stability; Contact resistance; MoOx solution process; Organic thin film transistor

Indexed keywords

CONTACT RESISTANCE; ELECTRODES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; MOLYBDENUM OXIDE; POLYMERS; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE;

BIAS STRESS STABILITIES; FIELD-EFFECT MOBILITIES; GATE DIELECTRIC LAYERS; ORGANIC THIN FILM TRANSISTORS; POLYMER THIN FILM TRANSISTORS; SOLUTION PROCESS; SURFACE WETTABILITY; THRESHOLD VOLTAGES (VTH);

THIN FILM TRANSISTORS;

EID: 84872099176 PISSN: 15661199 EISSN: None Source Type: Journal
DOI: 10.1016/j.orgel.2012.12.002 Document Type: Article

Times cited : (28)

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