Metal-oxide tft with mobility and stability comparable to ltps-tft

Digest of Technical Papers - SID International Symposium

Volumn 43, Issue 1, 2012, Pages 1123-1125

  Yu, Gang ^a   Shieh, Chan Long ^a   Foong, Fatt ^a   Wang, Guangming ^a   Xiao, Tian ^a   Musolf, Juergen ^a   Ottosson, Kristoffer ^a   Berkoff, Bruce ^a   Nilsson, Boo ^a  

^a CBRITE Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METALS; SEMICONDUCTING INDIUM COMPOUNDS; TEMPERATURE;

AM-OLED; DISPLAY APPLICATION; FLEXIBLE SUBSTRATE; FRAME TIME; LOW TEMPERATURES; LTPS-TFT; METAL OXIDES; PERFORMANCE PARAMETERS;

THIN FILM TRANSISTORS;

EID: 84873411924     PISSN: 0097966X     EISSN: 21680159     Source Type: Conference Proceeding    
DOI: 10.1002/j.2168-0159.2012.tb05990.x     Document Type: Conference Paper

References (3)

1. For early InGaZnO TFT works, see, for examples, K. Nomura et al., Nature 432, 488 (2004); H.Q. Chiang et al., Appl. Phys. Lett. 86, 13503 (2005).
2. For engineer prototypes based on IGZO-based MOTFT, see the corresponding sessions in Digest of the Technical Papers in SID’09, SID’10 and SID’11.
3. G. Yu et al., Session 35.4, SID’11.