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Physical Review Letters

Volumn 109, Issue 26, 2012, Pages

Tailoring magnetic doping in the topological insulator Bi 2Se3

(5) Zhang, Jian Min a,b Zhu, Wenguang c,d,e Zhang, Ying f Xiao, Di d,g Yao, Yugui a,b

a BEIJING INSTITUTE OF TECHNOLOGY (China)

b INSTITUTE OF PHYSICS (China)

c UNIVERSITY OF TENNESSEE (United States)

d OAK RIDGE NATIONAL LABORATORY (United States)

e UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

f BEIJING NORMAL UNIVERSITY (China)

g CARNEGIE MELLON UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3D TRANSITION METALS; ANTIFERROMAGNETICS; CHARGE STATE; CR-DOPED; FE DOPED MATERIALS; FE-DOPED; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; INTERSTITIAL SITES; TOPOLOGICAL INSULATORS;

ANTIFERROMAGNETISM; CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRIC INSULATORS; ELECTRONIC STRUCTURE; FERROMAGNETISM; MAGNETIC COUPLINGS; MAGNETIC PROPERTIES; TRANSITION METALS;

DOPING (ADDITIVES);

EID: 84871767189 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.109.266405 Document Type: Article

Times cited : (171)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.